Datasheet SI1470DH (Vishay) - 5
| 制造商 | Vishay |
| 描述 | N-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 7 / 5 — Si1470DH. TYPICAL CHARACTERISTICS. Current Derating*. Power Derating |
| 文件格式/大小 | PDF / 126 Kb |
| 文件语言 | 英语 |
Si1470DH. TYPICAL CHARACTERISTICS. Current Derating*. Power Derating
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Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted 6 3.6 5 3.0 Package Limited (A) 4 2.4 ) W( r Current e 3 w 1.8 o rain P D - 2 1.2 I D 1 0.6 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T T C - Case Temperature (°C) C - Case Temperature (°C)
Current Derating* Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74277 www.vishay.com S10-0646-Rev. B, 22-Mar-10 5
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted 6 3.6 5 3.0 Package Limited (A) 4 2.4 ) W( r Current e 3 w 1.8 o rain P D - 2 1.2 I D 1 0.6 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T T C - Case Temperature (°C) C - Case Temperature (°C)
Current Derating* Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74277 www.vishay.com S10-0646-Rev. B, 22-Mar-10 5