Datasheet SI1470DH (Vishay) - 6

制造商Vishay
描述N-Channel 30 V (D-S) MOSFET
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Si1470DH. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient

Si1470DH TYPICAL CHARACTERISTICS Normalized Thermal Transient Impedance, Junction-to-Ambient

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Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted 2 1 t n e i Duty Cycle = 0.5 s n e a c r n T a e d v e 0.2 i t p c m e I Notes: f f l E a 0.1 d m r P 0.1 DM e e z i l h T 0.05 a m t 1 r o t 0.02 2 N t 1 1. Duty Cycle, D = t 2 2. Per Unit Base = R thJA = 100 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 t n e Duty Cycle = 0.5 i s n e a c r n T a e d v e 0.2 i t p c m e I f f l a 0.1 E d m r 0.1 e e 0.05 z i l h a T m r 0.02 o N Single Pulse 0.01 10-3 10-2 10-1 10-4 1 10 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74277. www.vishay.com Document Number: 74277 6 S10-0646-Rev. B, 22-Mar-10