Datasheet IRF1010N (International Rectifier) - 6
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 8 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| 文件格式/大小 | PDF / 222 Kb |
| 文件语言 | 英语 |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
该数据表的模型线
文件文字版本
IRF1010N 500 1 5 V L D R IV E R V D S ID TOP 18A 30A 400 BOTTOM 43A R G D .U .T + 300 V - D D IA S A 2 0 V V GS t 0 .0 1 p Ω 200
Fig 12a.
Unclamped Inductive Test Circuit 100 V (B R )D S S tp ASE , Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 Starting T , Junction Temperature( C) ° J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I A S
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS - QGS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit 100 V (B R )D S S tp ASE , Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 Starting T , Junction Temperature( C) ° J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I A S
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS - QGS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com