Datasheet MURS120T3G, SURS8120T3G, NRVUS120VT3G (ON Semiconductor) - 4

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MURS140T3G, MURS160T3G, SURS8140T3G, SURS8160T3G, NRVUS160VT3G
10 400 200 7.0 80 TJ = 175°C A) 175°C 40 m ( 20 5.0 100 8.0 °C 4.0 TJ = 100°C 3.0 2.0 T 0.8 C = 25°C 2.0 0.4 0.2 , REVERSE CURRENT 0.08 TJ = 25°C (AMPS) I R 0.04 1.0 0.02 0.008 0.7 0.004 0 100 200 300 400 500 600 700 ARD CURRENT W 0.5 VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
0.3 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections ANEOUS FOR 0.2 can be estimated from these same curves if applied VR is sufficiently ANT below rated VR. 25 i , INST F 0.1 0.07 20 NOTE: TYPICAL CAPACITANCE AT 0.05 0 V = 24 pF 15 ANCE (pF) 0.03 ACIT 10 0.02 C, CAP 5.0 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0 v 0 4.0 8.0 12 16 20 24 28 32 36 40 F, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 6. Typical Forward Voltage
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Capacitance
10 5.0 TTS) (CAPACITANCE LOAD) 10 5.0 9.0 RATED VOLTAGE APPLIED A (AMPS) R I qJC = 13°C/W PK 8.0 4.0 + 20 SQUARE WAVE TJ = 175°C I TION (W AV 7.0 A CURRENT 6.0 3.0 DC ARD 5.0 W TJ = 175°C 4.0 2.0 FOR DC 3.0 2.0 1.0 VERAGE VERAGE POWER DISSIP , A 1.0 , A V) SQUARE WAVE V) I F(A 0 F(A 0 0 20 40 60 80 100 120 140 160 180 200 P 0 0.5 1.0 1.5 2.0 2.5 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Current Derating, Case Figure 10. Power Dissipation www.onsemi.com 4