Datasheet IRF510 (Vishay) - 4
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 8 / 4 — IRF510. Fig. 7 - Typical Source-Drain Diode Forward Voltage. Fig. 9 - … |
| 文件格式/大小 | PDF / 157 Kb |
| 文件语言 | 英语 |
IRF510. Fig. 7 - Typical Source-Drain Diode Forward Voltage. Fig. 9 - Maximum Drain Current vs. Case Temperature
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IRF510
www.vishay.com Vishay Siliconix 6.0 175 °C 5.0 4.0 100 25 °C ain Current (A) 3.0 ain Current (A) erse Dr v 2.0 , Dr I D , Re 10-1 1.0 I SD V = 0 V GS 0.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 175 91015_07 VSD, Source-to-Drain Voltage (V) 91015_09 TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD 102 V Operation in this area limited DS 5 by RDS(on) VGS D.U.T. 2 RG + 10 V 100 µs - DD 5 10 V 1 ms Pulse width ≤ 1 µs 2 ain Current (A) Duty factor ≤ 0.1 % 1 10 ms , Dr I D 5
Fig. 10a - Switching Time Test Circuit
T = 25
°
C C 2 T = 175
°
C J V single pulse DS 0.1 90 % 2 5 2 5 2 5 1 10 102 103 91015_08 VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms
10 ) thJC 0 - 0.5 1 0.2 0.1 PDM 0.05 0.02 0.1 t 0.01 1 mal Response (Z Single pulse t2 (thermal response) Ther Notes: 1. Duty factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91015_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0819-Rev. D, 02-Aug-2021
4
Document Number: 91015 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix 6.0 175 °C 5.0 4.0 100 25 °C ain Current (A) 3.0 ain Current (A) erse Dr v 2.0 , Dr I D , Re 10-1 1.0 I SD V = 0 V GS 0.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 175 91015_07 VSD, Source-to-Drain Voltage (V) 91015_09 TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
RD 102 V Operation in this area limited DS 5 by RDS(on) VGS D.U.T. 2 RG + 10 V 100 µs - DD 5 10 V 1 ms Pulse width ≤ 1 µs 2 ain Current (A) Duty factor ≤ 0.1 % 1 10 ms , Dr I D 5
Fig. 10a - Switching Time Test Circuit
T = 25
°
C C 2 T = 175
°
C J V single pulse DS 0.1 90 % 2 5 2 5 2 5 1 10 102 103 91015_08 VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms
10 ) thJC 0 - 0.5 1 0.2 0.1 PDM 0.05 0.02 0.1 t 0.01 1 mal Response (Z Single pulse t2 (thermal response) Ther Notes: 1. Duty factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91015_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0819-Rev. D, 02-Aug-2021
4
Document Number: 91015 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000