Preliminary Datasheet IRL3502 (International Rectifier) - 2
| 制造商 | International Rectifier |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 8 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| 文件格式/大小 | PDF / 84 Kb |
| 文件语言 | 英语 |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRL3502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.008 VGS = 4.5V, ID = 64A RDS(on) Static Drain-to-Source On-Resistance Ω ––– ––– 0.007 VGS = 7.0V, ID = 64A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 77 ––– ––– S VDS = 10V, ID = 64A ––– ––– 25 VDS = 20V, VGS = 0V I µA DSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = -10V I nA GSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 10V Qg Total Gate Charge ––– ––– 110 ID = 64A Qgs Gate-to-Source Charge ––– ––– 27 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time ––– 10 ––– VDD = 10V tr Rise Time ––– 140 ––– I ns D = 64A td(off) Turn-Off Delay Time ––– 96 ––– RG = 3.8Ω, VGS = 4.5V tf Fall Time ––– 130 ––– RD = 0.15Ω, Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 4700 ––– VGS = 0V Coss Output Capacitance ––– 1900 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 110 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 420 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V trr Reverse Recovery Time ––– 87 130 ns TJ = 25°C, IF = 64A Qrr Reverse RecoveryCharge ––– 200 310 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. Starting T Calculated continuous current based on maximum allowable J = 25°C, L = 190µH R junction temperature; for recommended current-handling of the G = 25Ω, IAS = 64A. package refer to Design Tip # 93-4 I ≤ ≤ SD 64A, di/dt ≤ 86A/µs, VDD V(BR)DSS, T ≤ J 150°C
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.008 VGS = 4.5V, ID = 64A RDS(on) Static Drain-to-Source On-Resistance Ω ––– ––– 0.007 VGS = 7.0V, ID = 64A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 77 ––– ––– S VDS = 10V, ID = 64A ––– ––– 25 VDS = 20V, VGS = 0V I µA DSS Drain-to-Source Leakage Current ––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = -10V I nA GSS Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 10V Qg Total Gate Charge ––– ––– 110 ID = 64A Qgs Gate-to-Source Charge ––– ––– 27 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 39 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time ––– 10 ––– VDD = 10V tr Rise Time ––– 140 ––– I ns D = 64A td(off) Turn-Off Delay Time ––– 96 ––– RG = 3.8Ω, VGS = 4.5V tf Fall Time ––– 130 ––– RD = 0.15Ω, Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 4700 ––– VGS = 0V Coss Output Capacitance ––– 1900 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 640 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 110 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 420 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V trr Reverse Recovery Time ––– 87 130 ns TJ = 25°C, IF = 64A Qrr Reverse RecoveryCharge ––– 200 310 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. Starting T Calculated continuous current based on maximum allowable J = 25°C, L = 190µH R junction temperature; for recommended current-handling of the G = 25Ω, IAS = 64A. package refer to Design Tip # 93-4 I ≤ ≤ SD 64A, di/dt ≤ 86A/µs, VDD V(BR)DSS, T ≤ J 150°C