Datasheets - MOSFET单晶体管 Fairchild
小节: "MOSFET单晶体管"
制造商: "Fairchild"
制造商
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon Wolfspeed系列: "FQP13N10L"
系列
2N7000, 2N7002, NDS7002A BSS100 BSS123 BUZ11 FDC5614P FDC6312P FDD4141 FDD6637 FDMS86500L FDMS8690 FDN302P FDN304P FDN337N FDN359AN FDS6675 FDS6679 FDS7788 FDV301N FDV303N FQP13N10 FQP13N10L IRF530A NDS0610 NDS8947 NDS9948 RF1S30N06LESM RFP30N06LE SI9424DY搜索结果: 1 输出量: 1
视图: 清单 / 图片
N沟道QFET MOSFET 100 V，12.8 A，180mΩ 这款N沟道增强型功率MOSFET使用飞兆半导体专有的平面条纹和DMOS技术生产。这项先进的MOSFET技术经过特别设计，可降低导通电阻，并提供出色的开关性能和高雪崩能量强度。这些设备适用于开关电源，音频放大器，直流电动机控制和可变开关电源应用。