Datasheets - MOSFET单晶体管 Infineon - 5
小节: "MOSFET单晶体管"
制造商: "Infineon"
制造商
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon Wolfspeed系列
AUIRF7309Q AUIRFR8401 AUIRFR8403 AUIRFR8405 AUIRL7732S2TR AUIRLR014N BSC016N04LS G BSC034N06NS BSC0504NSI BSC067N06LS3 G BSC070N10NS5 BSC093N04LS G BSP322P BSS89 F3L11MR12W2M1_B65 IGLD60R190D1 IGT40R070D1 E8220 IPB230N06L3 G IPD100N04S4-02 IPD100N06S4-03 IPD70N03S4L-04 IPD70N04S3-07 IPD90N03S4L-02 IPD90N03S4L-03 IPD90N04S3-04 IPD90N04S3-H4 IPD90N04S4-02 IPD90N04S4-03 IPD90N04S4-04 IPD90N04S4L-04 IPP230N06L3 G IQE013N04LM6 IQE013N04LM6CG IRF1405 IRF150 IRF3205 IRF4905 IRF4905S IRF5210S IRF5305S IRF6215S IRF6218S IRF6665 IRF6775M IRF7341 IRF7342 IRF7389 IRF7425 IRF7601 IRF7832TRPBF IRF8301M IRF8302M IRF8304M IRF8306M IRF8308M IRF9383M IRF9394M IRF9395M IRF9520NS IRF9530N IRF9530NS IRF9540N IRF9540NS IRF9Z24NS IRF9Z34NS IRFB3306 IRFF330 IRFP3703 IRFS3306 IRFZ34N IRFZ44N IRL3705N IRL520N IRLB8721 IRLB8743 IRLHM620 IRLML2803 IRLML2803TRPBF-1 IRLML6402 IRLR024N IRLR3103 IRLR3103PBF IRLR8743 IRLU024N IRLU3103 IRLU3103PBF IRLU8743 IRLZ24N IRLZ24NS SPB08P06P G SPB18P06P G SPB80P06P G SPD50P03L G搜索结果: 685 输出量: 81-100
视图: 清单 / 图片
MOSFET N-CH 100 V 80 A TDSON-8
采用DirectFET MX封装的30 V单N沟道HEXFET功率MOSFET，额定27安培，低导通电阻
- 采用DirectFET MX封装的30 V单N沟道HEXFET功率MOSFET和肖特基二极管，额定电流为23安培，并具有低导通电阻
- 采用DirectFET MX封装的30 V单N沟道HEXFET功率MOSFET，额定28安培，低导通电阻
- 采用DirectFET MX封装的30 V单N沟道HEXFET功率MOSFET和肖特基二极管，额定电流为31安培，并具有低导通电阻。
采用DirectFET MT封装的30 V单N沟道HEXFET功率MOSFET，额定电流为34安培，并具有低导通电阻
采用D-Pak封装的30 V单N沟道HEXFET功率MOSFET
采用I-Pak封装的30 V单N沟道HEXFET功率MOSFET- 采用D-Pak封装的30 V单N沟道HEXFET功率MOSFET
- 采用I-Pak封装的30 V单N沟道HEXFET功率MOSFET
OptiMOS 3功率晶体管- OptiMOS 3功率晶体管
采用TO-247AC封装的30 V单N沟道HEXFET功率MOSFET
Part Number: SPP02N60C3 Manufacturer: Infineon Description: MOSFET, N-CH, 650 V, 1.8 A, TO-220AB Download Data Sheet Docket: P VDS · · · · · G Tjmax G Specifications: Continuous Drain Current Id: 1.8 A Drain Source Voltage Vds: 650 V Number of ...
Part Number: SPD18P06P G Manufacturer: Infineon Description: MOSFET, P-CH, 60 V, 18.6 A, TO-252 Download Data Sheet Docket: SPD18P06P G SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance ...- Part Number: SPD15P10PL G Manufacturer: Infineon Description: MOSFET, P-CH, 100 V, 15 A, TO252-3 Download Data Sheet Docket: SPD15P10PL G SIPMOS® Power-Transistor Features · P-Channel · Enhancement mode · logic level · Avalanche rated · Pb-free ...
- Part Number: SPD15P10P G Manufacturer: Infineon Description: MOSFET, P-CH, 100 V, 15 A, TO252-3 Download Data Sheet Docket: SPD15P10P G SIPMOS Small-Signal-Transistor ® Product Summary V DS R DS(on),max ID -100 0.24 -15 V A Features · P-Channel · ...
Part Number: SPD08P06P G Manufacturer: Infineon Description: MOSFET, P-CH, 60 V, 8.83 A, DPAK Download Data Sheet Docket: SPD08P06P G SIPMOS Power-Transistor ® Product Summary V DS R DS(on),max ID -60 0.3 -8.8 V A Features · P-Channel · Enhancement ...- Part Number: SPD04P10PL G Manufacturer: Infineon Description: MOSFET, P-CH, 100 V, 4.2 A, TO252-3 Download Data Sheet Docket: SPD04P10PL G SIPMOS Power-Transistor ® Product Summary V DS R DS(on),max ID -100 850 -4.2 V m A Features · P-Channel · ...
- Part Number: SPD04N60C3 Manufacturer: Infineon Description: MOSFET, N-CH, 650 V, 4.5 A, DPAK Download Data Sheet Docket: VDS · · · · · · G Tjmax G G G Specifications: Continuous Drain Current Id: 4.5 A Drain Source Voltage Vds: 650 V MSL: MSL 1 - ...
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