Datasheets - MOSFET单晶体管 Infineon
小节: "MOSFET单晶体管"
制造商: "Infineon"
制造商
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon Wolfspeed系列
AUIRF7309Q AUIRFR8401 AUIRFR8403 AUIRFR8405 AUIRL7732S2TR AUIRLR014N BSC016N04LS G BSC034N06NS BSC0504NSI BSC067N06LS3 G BSC070N10NS5 BSC093N04LS G BSP322P BSS89 F3L11MR12W2M1_B65 IGLD60R190D1 IGT40R070D1 E8220 IPB230N06L3 G IPD100N04S4-02 IPD100N06S4-03 IPD70N03S4L-04 IPD70N04S3-07 IPD90N03S4L-02 IPD90N03S4L-03 IPD90N04S3-04 IPD90N04S3-H4 IPD90N04S4-02 IPD90N04S4-03 IPD90N04S4-04 IPD90N04S4L-04 IPP230N06L3 G IQE013N04LM6 IQE013N04LM6CG IRF1405 IRF150 IRF3205 IRF4905 IRF4905S IRF5210S IRF5305S IRF6215S IRF6218S IRF6665 IRF6775M IRF7341 IRF7342 IRF7389 IRF7425 IRF7601 IRF7832TRPBF IRF8301M IRF8302M IRF8304M IRF8306M IRF8308M IRF9383M IRF9394M IRF9395M IRF9520NS IRF9530N IRF9530NS IRF9540N IRF9540NS IRF9Z24NS IRF9Z34NS IRFB3306 IRFF330 IRFP3703 IRFS3306 IRFZ34N IRFZ44N IRL3705N IRL520N IRLB8721 IRLB8743 IRLHM620 IRLML2803 IRLML2803TRPBF-1 IRLML6402 IRLR024N IRLR3103 IRLR3103PBF IRLR8743 IRLU024N IRLU3103 IRLU3103PBF IRLU8743 IRLZ24N IRLZ24NS SPB08P06P G SPB18P06P G SPB80P06P G SPD50P03L G搜索结果: 685 输出量: 1-20
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- 400V N 沟道 HEXFET 晶体管 HEXFET 技术是 International Rectifier 的 HiRel 先进功率 MOSFET 晶体管系列的关键。这一最新“先进”设计采用高效的几何形状和独特的工艺，实现了：极低的导通电阻和高跨导。
采用 TO-220 封装的 100V 单 N 沟道功率 MOSFET IR MOSFET 系列功率 MOSFET 采用经过验证的硅工艺，为设计人员提供了广泛的器件组合，以支持各种应用，例如直流电机、逆变器、SMPS、照明、负载开关以及电池供电应用。这些器件可用于各种应用表面贴装和通孔封装具有行业标准尺寸，易于设计。
- 30V 单个 N 通道 Power MOSFET, 采用 I-PAK 封装 The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive ...
- 30V Logic Level Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
所有的小型单个 n 通道系列产品均适合汽车应用（2N7002 除外）。
30V 单个 N 通道和 P 通道 HEXFET Power MOSFET， 采用 SO-8 封装- -20V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装
40V 汽车级单个 N 通道 HEXFET Power MOSFET, 采用 DirectFET SC封装，在低导通电阻下进行了优化，额定电流为58A。
150V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring performance ...
100V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ SH package for Audio The StrongIRFET™ power MOSFET family is optimized for low R DS(on) and high current capability. The devices are ideal for low frequency applications requiring ...
55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装
OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on) The IQE013N04LM6CG extends the innovative Source-Down family with the 1.35mOhm, OptiMOS™ power MOSFET 40V in a 3.3x3.3 PQFN ...
OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down package with industry leading R DS(on) Infineon has extended its innovative Source-Down family with the IQE013N04LM6 1.35mOhm, 40V in a 3.3x3.3 PQFN package. This best-in-class power ...
采用D-Pak封装的汽车类Q101 55V单N沟道HEXFET功率MOSFET
采用I-Pak封装的55V单N沟道HEXFET功率MOSFET- 采用D-Pak封装的55V单N沟道HEXFET功率MOSFET
- 采用TO-220AB封装的30V单N沟道HEXFET功率MOSFET
- 采用TO-220AB封装的55V单N沟道HEXFET功率MOSFET
采用PQFN 3.3 x 3.3封装的20V单N沟道HEXFET功率MOSFET
MOSFET N-Ch 60V 30A TO220-3
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