Datasheets - IGBT单晶体管 - 10
小节: "IGBT单晶体管"
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APT Diodes Dynex Fairchild Fuji Electric Genesic Semiconductor Infineon International Rectifier Intersil IXYS NTE Electronics ON Semiconductor Powerex Sanyo Semikron STMicroelectronics Toshiba Vishay搜索结果: 624 输出量: 181-200
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Part Number: IGW08T120 Manufacturer: Infineon Description: IGBT,1200V,8A,TO247 Download Data Sheet Docket: TrenchStop® Series IGW08T120 q C Low Loss IGBT in TrenchStop® and Fieldstop technology · · · Short circuit withstand time 10µs Designed for ...
Part Number: IGP50N60T Manufacturer: Infineon Description: IGBT,600V,50A,TO220 Download Data Sheet Docket: TrenchStop® Series IGP50N60T IGW50N60T Low Loss IGBT in TrenchStop® and Fieldstop technology · · · · · Very low VCE(sat) 1.5 V (typ.) Maximum ...
- Part Number: IGP30N60H3 Manufacturer: Infineon Description: IGBT,600V,30A,TO220 Download Data Sheet Docket: ! # ' %& ' ( ) +, '& + &! + - . +3 * + 56* + 899 : * ! Specifications: Transistor Type: IGBT DC Collector Current: 30 A Collector Emitter ...
- Part Number: IGP20N60H3 Manufacturer: Infineon Description: IGBT,600V,20A,TO220 Download Data Sheet Docket: ! # $ ' %& ' ( ) +, '& + & + # -# # . +3 * + 56* + # 899 : * Specifications: Transistor Type: IGBT DC Collector Current: 20 A Collector ...
Part Number: IGB50N60T Manufacturer: Infineon Description: IGBT,600V,50A,TO263 Download Data Sheet Docket: TrenchStop® Series IGB50N60T p Low Loss IGBT in TrenchStop® technology · · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature ...- Part Number: IGB15N60T Manufacturer: Infineon Description: IGBT,600V,15A,TO263 Download Data Sheet Docket: TrenchStop® Series IGB15N60T q Low Loss IGBT in TrenchStop® technology · · · · · Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature ...
- Part Number: IGB10N60T Manufacturer: Infineon Description: IGBT,600V,10A,TO263 Download Data Sheet Docket: TrenchStop® Series IGB10N60T p Low Loss IGBT in TrenchStop® and Fieldstop technology · · · · · · · · · · · C Specifications: Transistor Type: ...
- Part Number: IGB01N120H2 Manufacturer: Infineon Description: IGBT,1200V,1A,TO263 Download Data Sheet Docket: IGB01N120H2 HighSpeed 2-Technology C · · Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 ...
- Part Number: IGA03N120H2 Manufacturer: Infineon Description: IGBT,1200V,3A,TO220 Download Data Sheet Docket: IGA03N120H2 HighSpeed 2-Technology C · · Designed for: - TV Horizontal Line Deflection 2 generation HighSpeed-Technology for 1200V ...
- Part Number: HGTG12N60C3D Manufacturer: Fairchild Description: IGBT, N, 3-TO-247 Download Data Sheet Docket: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS ...
- Part Number: HGTG12N60A4D Manufacturer: Fairchild Description: IGBT, TO-247 Download Data Sheet Docket: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The ...
- Part Number: HGTG12N60A4 Manufacturer: Fairchild Description: IGBT, N, TO-247 Download Data Sheet Docket: ©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2 HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A 600V, ...
- Part Number: HGTG11N120CND Manufacturer: Fairchild Description: IGBT, N Download Data Sheet Docket: HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch ...
- Part Number: HGTG10N120BND Manufacturer: Fairchild Description: IGBT,N CH,NPT,1200V,35A,TO-247 Download Data Sheet Docket: HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The ...
Part Number: GT50J325 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching ...
Part Number: GT50J102 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
Part Number: GT30J324 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching ...- Part Number: GT25Q102 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(LH) Download Data Sheet Docket: GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm ...
- Part Number: GT20J101 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm · · · · ...
Part Number: GT15J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...