AOZ8661BDT-05Electrical Characteristics TA = 25°C unless otherwise specified. ITLP2ITLP1 V V TLP2 1 TLP R DNY I I TLP2 TL 1 P IHoldVRWM VTLP2 VTLP1ITVBRVHold IRIR VHoldVBRITVTLP1 VTLP2 VRWMIHoldBidirectionalTVSITLP1ITLP2SymbolParameterConditionsMin.Typ.Max.Units VRWM Reverse Working Voltage 5 V VBR Reverse Breakdown Voltage IT = 100 µA 6 10 13 V IR Reverse Leakage Current Max. VRMW 1 50 nA Clamping Voltage(3)(4) ITLP = 1 A 2.5 3.5 (100ns Transmission Line Pulse) ITLP = 16 A 10.5 12 VCL V Clamping Voltage(3) IPP = 1 A 3.5 4.5 (IEC61000-4-5, 8/20 µs) IPP = 5 A 6.9 8 RDNY Dynamic Resistance(3)(4) ITLP = 1 A to 12 A 0.4 Ω CJ Junction Capacitance VI/O = 0 V, f = 1 MHz 0.15 0.20 pF Notes: 3. These specifications are guaranteed by design and characterization. 4. Measurements performed using a 100ns Transmission Line Pulse (TLP) system. Rev. 2.0 April 2019 www.aosmd.com Page 3 of 7