Datasheet IGLD60R190D1 (Infineon) - 6
| 制造商 | Infineon |
| 描述 | 600V CoolGaN™ enhancement-mode Power Transistor |
| 页数 / 页 | 17 / 6 — IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. Table 7. … |
| 修订版 | 02_00 |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
IGL. D60R190D1. 600V CoolGaN™ enhancement-mode Power Transistor. Table 7. Gate charge characteristics. Parameter. Symbol. Values. Unit
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文件文字版本
IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Table 7 Gate charge characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
I Gate charge Q GS = 0 to 3.8 mA; VDS= 400 V; G - 3.2 - nC ID= 5 A
Table 8 Reverse conduction characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
Source-Drain reverse voltage VSD - 2.5 3 V VGS = 0V; ISD = 5 A Pulsed current, reverse IS,pulse - - 23 A IG = 9.6 mA Reverse recovery charge Q 1 rr - 0 - nC ISD = 5 A, VDS = 400V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A 1 Excluding Qoss Final Data Sheet 6 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History
I Gate charge Q GS = 0 to 3.8 mA; VDS= 400 V; G - 3.2 - nC ID= 5 A
Table 8 Reverse conduction characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max.
Source-Drain reverse voltage VSD - 2.5 3 V VGS = 0V; ISD = 5 A Pulsed current, reverse IS,pulse - - 23 A IG = 9.6 mA Reverse recovery charge Q 1 rr - 0 - nC ISD = 5 A, VDS = 400V Reverse recovery time trr - 0 - ns Peak reverse recovery current Irrm - 0 - A 1 Excluding Qoss Final Data Sheet 6 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History