Datasheet IGLD60R190D1 (Infineon) - 8

IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Figure 5 Repetitive safe operating area1 Figure 6 Repetitive safe operating area1 25 25 20 20 tp ≤ 20ns Limited by RDS(on) 15 15 ] ] [A [A I D I D tp ≤ 20ns 10 10 Limited by RDS(on) 5 5 0 0 0 100 200 300 400 500 600 0 100 200 300 400 500 600 V [V] V [V] DS DS
Tc = 25 °C; Tj ≤ 150 °C Tc = 125 °C; Tj ≤ 150 °C
Figure 7 Typ. output characteristics Figure 8 Typ. output characteristics 35 35
I =9.6 mA G
30
IG=3 mA
30
IG=0.96 mA
25 25
IG=0.3 mA IG=9.6 mA
20
I
20 ]
G=0.096 mA
]
IG=3 mA
[A [A
IG=0.96 mA
I D 15
I
I D
G=0.01 mA
15
IG=0.3 mA
10 10
IG=0.096 mA I
5 5
G=0.01 mA
0 0 0 2 4 6 8 10 0 2 4 6 8 10 V [V] V [V] DS DS
ID=f(VDS,IG); Tj = 25 °C ID=f(VDS,IG); Tj = 125 °C 1 Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application. Final Data Sheet 8 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History