Datasheet IGLD60R190D1 (Infineon) - 9

IGL D60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Figure 9 Typ. Drain-source on-state resistance Figure 10 Drain-source on-state resistance 500 320
IG=0.096 mA I
450
G=0.3 mA
280
IG=0.96 mA
400 240 )
IG=3 mA
Ω (m
I V = 3 V G=9.6 mA GS
) ] n o Ω 200 ( 350
I = 9.6 mA G
DS [m R ) n o( DS 160 300 R 120 250 80 200 -50 0 50 100 150 0 5 10 15 20 25 T [oC] j I [A] D
RDS(on)=f(ID,IG); Tj = 125 °C RDS(on)=f(Tj); ID = 5 A
Figure 11 Typ. gate characteristics forward Figure 12 Typ. gate characteristics reverse V (V) 300 GS -25 -20 -15 -10 -5 0 0 250 -50 200
125 oC
-100 ] ) A 150 -150 A [m
25 oC
(m I GS I GS -200 100 -250 50 -300
-55 oC
0 0 1 2 3 4 -350 V [V] GS
IGS=f(VGS,Tj); open drain IGS=f(VGS); Tj = 25 °C Final Data Sheet 9 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History