Datasheet BUK7V4R2-40H (Nexperia) - 9
| 制造商 | Nexperia |
| 描述 | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) |
| 页数 / 页 | 13 / 9 — Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level … |
| 修订版 | 11022021 |
| 文件格式/大小 | PDF / 313 Kb |
| 文件语言 | 英语 |
Nexperia. BUK7V4R2-40H. Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
该数据表的模型线
文件文字版本
Nexperia BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032391 160 IS (A ( ) A 128 96 64 17 1 5 7 °C ° 32 Tj = 2 5 2 ° 5 C ° -5 - 5° 5 C ° 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values, FET1 and FET2
BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 9 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-032391 160 IS (A ( ) A 128 96 64 17 1 5 7 °C ° 32 Tj = 2 5 2 ° 5 C ° -5 - 5° 5 C ° 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values, FET1 and FET2
BUK7V4R2-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 9 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents