Datasheet HMC659 (Analog Devices) - 6

HMC659
v02.0217
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Pad Descriptions
Pad Number Function Description Interface Schematic This pad is DC coupled and matched 1 IN IP to 50 Ohms. Blocking capacitor is required. H Gate control 2 for amplifier. Attach bypass 2 Vgg2 capacitor per application circuit herein. For nominal operation +3V should be applied to Vgg2. R - C E W Low frequency termination. Attach bypass 3 ACG1 O capacitor per application circuit herein. Low frequency termination. Attach bypass 4 ACG2 R & P capacitor per application circuit herein. A E RF output for amplifier. Connect DC bias (Vdd) network to 5 OUT & Vdd provide drain current (Idd). See application circuit herein. IN Low frequency termination. Attach bypass 7 ACG3 capacitor per application circuit herein. S - L Gate control 1 for amplifier. Attach bypass R capacitor per application circuit herein. Please 6 Vgg1 follow “MMIC Amplifier Biasing Procedure” IE application note. LIF Die Bottom GND Die bottom must be connected to RF/DC ground. P M A For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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