Datasheet Si1308EDL (Vishay) - 2
| 制造商 | Vishay |
| 描述 | N-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 11 / 2 — Si1308EDL. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. … |
| 文件格式/大小 | PDF / 260 Kb |
| 文件语言 | 英语 |
Si1308EDL. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. MAX. UNIT. Static. Dynamic b
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Si1308EDL
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - - V VDS Temperature Coefficient ΔVDS/TJ - 32 - ID = 250 μA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - -3 - Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V VDS = 0 V, VGS = 4.5 V - - 1 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 20 μA VDS = 30 V, VGS = 0 V - - 1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 2 - - A VGS = 10 V, ID = 1.4 A - 0.110 0.132 Drain-Source On-State Resistance a RDS(on) VGS = 4.5 V, ID = 1 A - 0.120 0.144 Ω VGS = 2.5 V, ID = 0.5 A - 0.142 0.185 Forward Transconductance a gfs VDS = 10 V, ID = 1.4 A - 5 - S
Dynamic b
Input Capacitance Ciss - 105 - Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz - 23 - pF Reverse Transfer Capacitance Crss - 11 - VDS = 15 V, VGS = 10 V, ID = 1.4 A - 2.7 4.1 Total Gate Charge Qg - 1.4 2.1 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 1.4 A - 0.3 - Gate-Drain Charge Qgd - 0.5 - Gate Resistance Rg f = 1 MHz 1.4 7 14 Ω Turn-On Delay Time td(on) - 2 4 Rise Time tr V - 9 18 DD = 15 V, RL = 13.6 Ω I Turn-Off Delay Time t D ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω d(off) - 8 16 Fall Time tf - 8 16 ns Turn-On Delay Time td(on) - 8 16 Rise Time tr V - 13 20 DD = 15 V, RL = 13.6 Ω I Turn-Off Delay Time t D ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω d(off) - 15 23 Fall Time tf - 6 12
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - - 0.4 A Pulse Diode Forward Current a ISM - - 6 Body Diode Voltage VSD IF = 1.1 A - 0.8 1.2 V Body Diode Reverse Recovery Time trr - 8 16 ns Body Diode Reverse Recovery Charge Qrr - 3 6 nC IF = 1.1 A, dI/dt = 100 A/μs, TJ = 25 °C Reverse Recovery Fall Time ta - 5 - ns Reverse Recovery Rise Time tb - 3 -
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1997-Rev. C, 06-Oct-14
2
Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 30 - - V VDS Temperature Coefficient ΔVDS/TJ - 32 - ID = 250 μA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - -3 - Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.6 - 1.5 V VDS = 0 V, VGS = 4.5 V - - 1 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 20 μA VDS = 30 V, VGS = 0 V - - 1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 °C - - 10 On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 2 - - A VGS = 10 V, ID = 1.4 A - 0.110 0.132 Drain-Source On-State Resistance a RDS(on) VGS = 4.5 V, ID = 1 A - 0.120 0.144 Ω VGS = 2.5 V, ID = 0.5 A - 0.142 0.185 Forward Transconductance a gfs VDS = 10 V, ID = 1.4 A - 5 - S
Dynamic b
Input Capacitance Ciss - 105 - Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz - 23 - pF Reverse Transfer Capacitance Crss - 11 - VDS = 15 V, VGS = 10 V, ID = 1.4 A - 2.7 4.1 Total Gate Charge Qg - 1.4 2.1 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 1.4 A - 0.3 - Gate-Drain Charge Qgd - 0.5 - Gate Resistance Rg f = 1 MHz 1.4 7 14 Ω Turn-On Delay Time td(on) - 2 4 Rise Time tr V - 9 18 DD = 15 V, RL = 13.6 Ω I Turn-Off Delay Time t D ≅ 1.1 A, VGEN = 10 V, Rg = 1 Ω d(off) - 8 16 Fall Time tf - 8 16 ns Turn-On Delay Time td(on) - 8 16 Rise Time tr V - 13 20 DD = 15 V, RL = 13.6 Ω I Turn-Off Delay Time t D ≅ 1.1 A, VGEN = 4.5 V, Rg = 1 Ω d(off) - 15 23 Fall Time tf - 6 12
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - - 0.4 A Pulse Diode Forward Current a ISM - - 6 Body Diode Voltage VSD IF = 1.1 A - 0.8 1.2 V Body Diode Reverse Recovery Time trr - 8 16 ns Body Diode Reverse Recovery Charge Qrr - 3 6 nC IF = 1.1 A, dI/dt = 100 A/μs, TJ = 25 °C Reverse Recovery Fall Time ta - 5 - ns Reverse Recovery Rise Time tb - 3 -
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1997-Rev. C, 06-Oct-14
2
Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000