Si1308EDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.006 10-3 T = 25 °C J 0.005 10-4 ) A 0.004 10-5 T = 150 °C rrent (A J u 0.003 10-6 ate C ate Current (m G G - T = 25 °C 0.002 J - 10-7 S S I GS I GS 0.001 10-8 0.000 10-9 0 3 6 9 12 15 0 5 10 15 V - Gate-Source Voltage (V) V - Gate-to-Source Voltage (V) GS GS Gate Source Voltage vs. Gate CurrentGate Source Voltage vs. Gate Current 6 0.20 V = 10 V thru 3 V GS ) 4.5 0.17 (A) rent tance (Ω is V = 2.5 V s GS 3 e 0.14 in Cur -R n ra V = 2 V V = 4.5 V GS D GS - -O )n I D (o S 1.5 D 0.11 R V = 10 V GS 0 0.08 0 0.5 1 1.5 2 0 1.5 3 4.5 6 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D Output CharacteristicsOn-Resistance vs. Drain Current 2 10 I = 1.4 A D (V) 8 1.5 V = 8 V DS tage (A) 6 rent V = 15 V DS 1 ource Vol S in Cur ra to- 4 V = 24 V D DS - T = 25 °C C ate- I D G 0.5 - GS 2 V T = 125 °C C T = - 55 °C C 0 0 0 0.5 1 1.5 2 0 0.7 1.4 2.1 2.8 V - Gate-to-Source Voltage (V) GS Q - Total Gate Charge (nC) g Transfer CharacteristicsGate Charge S14-1997-Rev. C, 06-Oct-14 3 Document Number: 63399 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000