Datasheet AD8422 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | High Performance, Low Power, Rail-to-Rail Precision Instrumentation Amplifier |
| 页数 / 页 | 24 / 3 — Data Sheet. AD8422. SPECIFICATIONS SOIC PACKAGE. Table 1. Test … |
| 修订版 | A |
| 文件格式/大小 | PDF / 655 Kb |
| 文件语言 | 英语 |
Data Sheet. AD8422. SPECIFICATIONS SOIC PACKAGE. Table 1. Test Conditions/. AD8422ARZ. AD8422BRZ. Parameter. Comments
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Data Sheet AD8422 SPECIFICATIONS SOIC PACKAGE
VS = ±15 V, VREF = 0 V, V+IN = 0 V, V−IN = 0 V, TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.
Table 1. Test Conditions/ AD8422ARZ AD8422BRZ Parameter Comments Min Typ Max Min Typ Unit Max
COMMON-MODE REJECTION RATIO CMRR DC to 60 Hz with 1 kΩ VCM = −10 V to +10 V Source Imbalance G = 1 86 94 dB G = 10 106 114 dB G = 100 126 134 dB G = 1000 146 150 dB Over Temperature, G=1 T = −40°C to +85°C 83 89 dB CMRR at 10 kHz VCM = −10 V to +10 V G = 1 80 80 dB G = 10 90 95 dB G = 100 100 100 dB G = 1000 100 100 dB NOISE1 Voltage Noise, 1 kHz Input Voltage Noise, eNI VIN+, VIN−, VREF = 0 V 8 8 nV/√Hz Output Voltage Noise, eNO 80 80 nV/√Hz Peak to Peak, RTI f = 0.1 Hz to 10 Hz G = 1 2 2 μV p-p G = 10 0.5 0.5 μV p-p G = 100 to 1000 0.15 0.15 μV p-p Current Noise f = 1 kHz 90 90 110 fA/√Hz f = 0.1 Hz to 10 Hz 8 8 pA p-p VOLTAGE OFFSET2 Input Offset, VOSI VS = ±2.3 V to ±15 V 60 25 μV Over Temperature T = −40°C to +85°C 70 40 μV Average Temperature 0.4 0.3 μV/°C Coefficient Output Offset, VOSO VS = ±2.3 V to ±15 V 300 150 μV Over Temperature T = −40°C to +85°C 500 300 μV Average Temperature 5 2 μV/°C Coefficient Offset RTI vs. Supply (PSR) VS = ±2.3 V to ±18 V G = 1 90 110 100 120 dB G = 10 110 130 120 140 dB G = 100 124 150 140 160 dB G = 1000 130 150 140 160 dB INPUT CURRENT Input Bias Current VS = ±2.3 V to ±15 V 0.5 1 0.2 0.5 nA Over Temperature T = −40°C to +85°C 2 1 nA Average Temperature 4 4 pA/°C Coefficient Input Offset Current VS = ±2.3 V to ±15 V 0.2 0.3 0.1 0.15 nA Over Temperature T = −40°C to +85°C 0.8 0.3 nA Average Temperature 1 1 pA/°C Coefficient Rev. A | Page 3 of 24 Document Outline FEATURES APPLICATIONS CONNECTION DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS SOIC PACKAGE MSOP PACKAGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION ARCHITECTURE GAIN SELECTION RG Power Dissipation REFERENCE TERMINAL INPUT VOLTAGE RANGE LAYOUT Common-Mode Rejection Ratio over Frequency Power Supplies and Grounding Reference Pin INPUT BIAS CURRENT RETURN PATH INPUT VOLTAGES BEYOND THE SUPPLY RAILS Input Voltages Beyond the Maximum Ratings RADIO FREQUENCY INTERFERENCE (RFI) APPLICATIONS INFORMATION PRECISION BRIDGE CONDITIONING PROCESS CONTROL ANALOG INPUT OUTLINE DIMENSIONS ORDERING GUIDE
Data Sheet AD8422 SPECIFICATIONS SOIC PACKAGE
VS = ±15 V, VREF = 0 V, V+IN = 0 V, V−IN = 0 V, TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.
Table 1. Test Conditions/ AD8422ARZ AD8422BRZ Parameter Comments Min Typ Max Min Typ Unit Max
COMMON-MODE REJECTION RATIO CMRR DC to 60 Hz with 1 kΩ VCM = −10 V to +10 V Source Imbalance G = 1 86 94 dB G = 10 106 114 dB G = 100 126 134 dB G = 1000 146 150 dB Over Temperature, G=1 T = −40°C to +85°C 83 89 dB CMRR at 10 kHz VCM = −10 V to +10 V G = 1 80 80 dB G = 10 90 95 dB G = 100 100 100 dB G = 1000 100 100 dB NOISE1 Voltage Noise, 1 kHz Input Voltage Noise, eNI VIN+, VIN−, VREF = 0 V 8 8 nV/√Hz Output Voltage Noise, eNO 80 80 nV/√Hz Peak to Peak, RTI f = 0.1 Hz to 10 Hz G = 1 2 2 μV p-p G = 10 0.5 0.5 μV p-p G = 100 to 1000 0.15 0.15 μV p-p Current Noise f = 1 kHz 90 90 110 fA/√Hz f = 0.1 Hz to 10 Hz 8 8 pA p-p VOLTAGE OFFSET2 Input Offset, VOSI VS = ±2.3 V to ±15 V 60 25 μV Over Temperature T = −40°C to +85°C 70 40 μV Average Temperature 0.4 0.3 μV/°C Coefficient Output Offset, VOSO VS = ±2.3 V to ±15 V 300 150 μV Over Temperature T = −40°C to +85°C 500 300 μV Average Temperature 5 2 μV/°C Coefficient Offset RTI vs. Supply (PSR) VS = ±2.3 V to ±18 V G = 1 90 110 100 120 dB G = 10 110 130 120 140 dB G = 100 124 150 140 160 dB G = 1000 130 150 140 160 dB INPUT CURRENT Input Bias Current VS = ±2.3 V to ±15 V 0.5 1 0.2 0.5 nA Over Temperature T = −40°C to +85°C 2 1 nA Average Temperature 4 4 pA/°C Coefficient Input Offset Current VS = ±2.3 V to ±15 V 0.2 0.3 0.1 0.15 nA Over Temperature T = −40°C to +85°C 0.8 0.3 nA Average Temperature 1 1 pA/°C Coefficient Rev. A | Page 3 of 24 Document Outline FEATURES APPLICATIONS CONNECTION DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS SOIC PACKAGE MSOP PACKAGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION ARCHITECTURE GAIN SELECTION RG Power Dissipation REFERENCE TERMINAL INPUT VOLTAGE RANGE LAYOUT Common-Mode Rejection Ratio over Frequency Power Supplies and Grounding Reference Pin INPUT BIAS CURRENT RETURN PATH INPUT VOLTAGES BEYOND THE SUPPLY RAILS Input Voltages Beyond the Maximum Ratings RADIO FREQUENCY INTERFERENCE (RFI) APPLICATIONS INFORMATION PRECISION BRIDGE CONDITIONING PROCESS CONTROL ANALOG INPUT OUTLINE DIMENSIONS ORDERING GUIDE